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041BV33
CY7C1041BV33
256K x 16 Static RAM
Features
* High speed -- tAA = 12 ns * Low active power -- 612 mW (max.) * Low CMOS standby power (Commercial L version) -- 1.8 mW (max.) * 2.0V Data Retention (600 W at 2.0V retention) * Automatic power-down when deselected * TTL-compatible inputs and outputs * Easy memory expansion with CE and OE features written into the location specified on the address pins (A0 through A17). If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O8 through I/O15) is written into the location specified on the address pins (A0 through A17). Reading from the device is accomplished by taking Chip Enable (CE) and Output Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then data from the memory location specified by the address pins will appear on I/O0 to I/O7. If Byte High Enable (BHE) is LOW, then data from memory will appear on I/O8 to I/O15. See the truth table at the back of this data sheet for a complete description of read and write modes. The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when the device is deselected (CE HIGH), the outputs are disabled (OE HIGH), the BHE and BLE are disabled (BHE, BLE HIGH), or during a write operation (CE LOW, and WE LOW). The CY7C1041BV33 is available in a standard 44-pin 400-mil-wide body width SOJ and 44-pin TSOP II package with center power and ground (revolutionary) pinout.
Functional Description
The CY7C1041BV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7), is
Logic Block Diagram
INPUT BUFFER
Pin Configuration
SOJ TSOP II Top View A0 A1 A2 A3 A4 CE I/O0 I/O1 I/O2 I/O3 VCC VSS I/O4 I/O5 I/O6 I/O7 WE A5 A6 A7 A8 A9
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23
A0 A1 A2 A3 A4 A5 A6 A7 A8
256K x 16 ARRAY 1024 x 4096
I/O0 - I/O7 I/O8 - I/O15
COLUMN DECODER
BHE WE CE OE BLE
A17 A16 A15 OE BHE BLE I/O15 I/O14 I/O13 I/O12 VSS VCC I/O11 I/O10 I/O9 I/O8 NC A14 A13 A12 A11 A10
ROW DECODER
Selection Guide
-12 Maximum Access Time (ns) Maximum Operating Current (mA) Comm'l Ind'l Maximum CMOS Standby Current (mA) Com'l/Ind'l Com'l L 12 190 8 0.5 -15 15 170 190 8 0.5 -17 17 160 180 8 0.5 -20 20 150 170 8 0.5 -25 25 130 150 8 0.5
Cypress Semiconductor Corporation Document #: 38-05168 Rev. **
A9 A10 A 11 A 12 A 13 A14 A15 A16 A17
SENSE AMPS
*
3901 North First Street
*
San Jose
*
CA 95134 * 408-943-2600 Revised November 15, 2001
CY7C1041BV33
Maximum Ratings
(Above which the useful life may be impaired. For user guidelines, not tested.) Storage Temperature ................................. -65C to +150C Ambient Temperature with Power Applied............................................. -55C to +125C Supply Voltage on VCC to Relative GND[1] .... -0.5V to +4.6V DC Voltage Applied to Outputs in High Z State[1] ....................................-0.5V to VCC + 0.5V DC Input Voltage[1] ................................ -0.5V to VCC + 0.5V Current into Outputs (LOW) ........................................ 20 mA
Operating Range
Range Commercial Industrial Ambient Temperature[2] 0C to +70C -40C to +85C VCC 3.3V 0.3V
Electrical Characteristics Over the Operating Range
Parameter VOH VOL VIH VIL IIX IOZ ICC ISB1 Description Output HIGH Voltage Output LOW Voltage Input HIGH Voltage Input LOW Voltage[1] Input Load Current Output Leakage Current VCC Operating Supply Current Automatic CE Power-Down Current --TTL Inputs Automatic CE Power-Down Current --CMOS Inputs GND < VI < VCC GND < VOUT < VCC, Output Disabled VCC = Max., f = fMAX = 1/tRC Max. VCC, CE > VIH VIN > VIH or VIN < VIL, f = fMAX Max. VCC, CE > VCC - 0.3V, VIN > VCC - 0.3V, or VIN < 0.3V, f = 0 Com'l/Ind'l Com'l L Comm'l Ind'l Test Conditions Min. VCC = Min., IOH = -4.0 mA VCC = Min., IOL = 8.0 mA 2.2 -0.5 -1 -1 2.4 0.4 VCC + 0.5 0.8 +1 +1 190 40 2.2 -0.5 -1 -1 -12 Max. Min. 2.4 0.4 VCC + 0.5 0.8 +1 +1 170 190 40 -15 Max. Unit V V V V A A mA mA mA
ISB2
8 0.5
8 0.5
mA mA
Notes: 1. VIL (min.) = -2.0V for pulse durations of less than 20 ns. 2. TA is the "Instant On" case temperature.
Document #: 38-05168 Rev. **
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CY7C1041BV33
Electrical Characteristics Over the Operating Range (continued)
Test Conditions Parameter VOH VOL VIH VIL IIX IOZ ICC ISB1 Description Output HIGH Voltage Output LOW Voltage Input HIGH Voltage Input LOW Voltage[1] Input Load Current Output Leakage Current VCC Operating Supply Current Automatic CE Power-Down Current --TTL Inputs Automatic CE Power-Down Current --CMOS Inputs GND < VI < VCC GND < VOUT < VCC, Output Disabled VCC = Max., f = fMAX = 1/tRC Max. VCC, CE > VIH VIN > VIH or VIN < VIL, f = fMAX Max. VCC, CE > VCC - 0.3V, VIN > VCC - 0.3V, or VIN < 0.3V, f=0 Com'l/Ind'l Com'l L Comm'l Ind'l VCC = Min., IOH = -4.0 mA VCC = Min., IOL = 8.0 mA 2.2 -0.5 -1 -1 2.4 0.4 VCC + 0.5 0.8 +1 +1 160 180 40 2.2 -0.5 -1 -1 -17 Min. Max. Min. 2.4 0.4 VCC + 0.5 0.8 +1 +1 150 170 40 2.2 -0.5 -1 -1 -20 Max. Min. 2.4 0.4 VCC + 0.5 0.8 +1 +1 130 150 40 mA -25 Max. Unit V V V V A A mA
ISB2
8 0.5
8 0.5
8 0.5
mA mA
Capacitance[3]
Parameter CIN COUT Description Input Capacitance I/O Capacitance Test Conditions TA = 25C, f = 1 MHz, VCC = 3.3V Max. 8 8 Unit pF pF
Note: 3. Tested initially and after any design or process changes that may affect these parameters.
AC Test Loads and Waveforms
3.3V OUTPUT 30 pF INCLUDING JIG AND SCOPE (a) R2 351 R1 317 THEVENIN EQUIVALENT 167 OUTPUT 1.73V ALL INPUT PULSES 3.3V 90% GND Rise time: 1 V/ns 10% 90% 10% Fall time: 1 V/ns
(b)
Document #: 38-05168 Rev. **
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CY7C1041BV33
Switching Characteristics[4] Over the Operating Range
-12 Parameter READ CYCLE tRC tAA tOHA tACE tDOE tLZOE tHZOE tLZCE tHZCE tPU tPD tDBE tLZBE tHZBE tWC tSCE tAW tHA tSA tPWE tSD tHD tLZWE tHZWE tBW Read Cycle Time Address to Data Valid Data Hold from Address Change CE LOW to Data Valid OE LOW to Data Valid OE LOW to Low Z OE HIGH to High Z
[5, 6]
-15 Min. 15 12 15 3 12 6 15 7 0 6 7 3 6 7 0 12 6 15 7 0 6 7 15 12 12 0 0 12 8 0 3 6 7 12 12 17 12 12 0 0 12 9 0 3 0 0 3 0 3 Max. Min. 17
-17 Max. Unit ns 17 17 8 7 7 17 7 8 ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns 8 ns ns
Description
Min. 12 3
Max.
0 3 0
CE LOW to Low Z[6] CE HIGH to High Z[5, 6] CE LOW to Power-Up CE HIGH to Power-Down Byte Enable to Data Valid Byte Enable to Low Z Byte Disable to High Z
[7, 8]
0
WRITE CYCLE
Write Cycle Time CE LOW to Write End Address Set-Up to Write End Address Hold from Write End Address Set-Up to Write Start WE Pulse Width Data Set-Up to Write End Data Hold from Write End WE HIGH to Low Z[6] WE LOW to High Z
[5, 6]
12 10 10 0 0 10 7 0 3 10
Byte Enable to End of Write
Notes: 4. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified IOL/IOH and 30-pF load capacitance. 5. tHZOE, tHZCE, and tHZWE are specified with a load capacitance of 5 pF as in part (b) of AC Test Loads. Transition is measured 500 mV from steady-state voltage. 6. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device. 7. The internal write time of the memory is defined by the overlap of CE LOW, and WE LOW. CE and WE must be LOW to initiate a write, and the transition of either of these signals can terminate the write. The input data set-up and hold timing should be referenced to the leading edge of the signal that terminates the write. 8. The minimum write cycle time for Write Cycle No. 3 (WE controlled, OE LOW) is the sum of tHZWE and tSD.
Document #: 38-05168 Rev. **
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CY7C1041BV33
Switching Characteristics[4] Over the Operating Range (continued)
-20 Parameter READ CYCLE tRC tAA tOHA tACE tDOE tLZOE tHZOE tLZCE tHZCE tPU tPD tDBE tLZBE tHZBE tWC tSCE tAW tHA tSA tPWE tSD tHD tLZWE tHZWE tBW Read Cycle Time Address to Data Valid Data Hold from Address Change CE LOW to Data Valid OE LOW to Data Valid OE LOW to Low Z OE HIGH to High Z
[5, 6]
-25 Max. Min. 25 20 25 5 20 8 25 10 0 8 10 5 8 10 0 20 8 25 10 0 8 10 25 15 15 0 0 15 10 0 5 8 10 15 Max. Unit ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns
Description
Min. 20 3
0 3 0
CE LOW to Low Z[6] CE HIGH to High Z[5, 6] CE LOW to Power-Up CE HIGH to Power-Down Byte Enable to Data Valid Byte Enable to Low Z Byte Disable to High Z Write Cycle Time CE LOW to Write End Address Set-Up to Write End Address Hold from Write End Address Set-Up to Write Start WE Pulse Width Data Set-Up to Write End Data Hold from Write End WE HIGH to Low Z[6] WE LOW to High Z[5, 6] Byte Enable to End of Write
0
WRITE CYCLE[7, 8] 20 13 13 0 0 13 9 0 3 13
Data Retention Characteristics Over the Operating Range (For L version only)
Parameter VDR ICCDR tCDR[3] tR[9] Description VCC for Data Retention Data Retention Current Chip Deselect to Data Retention Time Operation Recovery Time VCC = VDR = 2.0V, CE > VCC - 0.3V, VIN > VCC - 0.3V or VIN < 0.3V Conditions[10] Min. 2.0 330 0 tRC Max. Unit V A ns ns
Notes: 9. tr < 3 ns for the -12 and -15 speeds. tr < 5 ns for the -20 and slower speeds. 10. No input may exceed VCC + 0.5V.
Document #: 38-05168 Rev. **
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CY7C1041BV33
Data Retention Waveform
DATA RETENTION MODE VCC CE
1041BV33-
3.0V tCDR
VDR > 2V
3.0V tR
Switching Waveforms
Read Cycle No. 1
[11, 12]
tRC ADDRESS tAA tOHA DATA OUT PREVIOUS DATA VALID DATA VALID
1041BV33-6
Read Cycle No. 2 (OE Controlled)
ADDRESS
[12, 13]
tRC CE tACE OE BHE, BLE tDOE tLZOE tDBE tLZBE HIGH IMPEDANCE tLZCE VCC SUPPLY CURRENT tPU 50% tHZCE tHZBE DATA VALID tPD 50% IISB SB
1041BV33-7
tHZOE
HIGH IMPEDANCE
DATA OUT
IICC CC
Notes: 11. Device is continuously selected. OE, CE, BHE and/or BHE = VIL. 12. WE is HIGH for read cycle. 13. Address valid prior to or coincident with CE transition LOW.
Document #: 38-05168 Rev. **
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CY7C1041BV33
Switching Waveforms (continued)
Write Cycle No. 1 (CE Controlled)
[14, 15]
tWC ADDRESS
CE
tSA
tSCE
tAW tPWE WE tBW BHE, BLE tSD DATAI/O tHD
tHA
1041BV33-8
Write Cycle No. 2 (BLE or BHE Controlled)
tWC ADDRESS
BHE, BLE
tSA
tBW
tAW tPWE WE tSCE CE tSD DATAI/O tHD
tHA
1041BV33-9
Notes: 14. Data I/O is high-impedance if OE or BHE and/or BLE= VIH. 15. If CE goes HIGH simultaneously with WE going HIGH, the output remains in a high-impedance state.
Document #: 38-05168 Rev. **
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CY7C1041BV33
Switching Waveforms (continued)
Write Cycle No.3 (WE Controlled, OE LOW)
tWC ADDRESS
CE
tSCE
tAW tSA tPWE
tHA
WE tBW BHE, BLE tHZWE DATA I/O tLZWE
1041BV33-10
tSD
tHD
Truth Table
CE H L L L L L L L OE X L L L X X X H WE X H H H L L L H BLE X L L H L L H X BHE X L H L L H L X I/O0-I/O7 High Z Data Out Data Out High Z Data In Data In High Z High Z I/O8-I/O15 High Z Data Out High Z Data Out Data In High Z Data In High Z Mode Power Down Read All Bits Read Lower Bits Only Read Upper Bits Only Write All Bits Write Lower Bits Only Write Upper Bits Only Selected, Outputs Disabled Power Standby (ISB) Active (ICC) Active (ICC) Active (ICC) Active (ICC) Active (ICC) Active (ICC) Active (ICC)
Document #: 38-05168 Rev. **
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CY7C1041BV33
Ordering Information
Speed (ns) 12 Ordering Code CY7C1041BV33-12VC CY7C1041BV33L-12VC CY7C1041BV33-12ZC CY7C1041BV33L-12ZC CY7C1041BV33-15VC CY7C1041BV33L-15VC CY7C1041BV33-15ZC CY7C1041BV33L-15ZC CY7C1041BV33-15VI CY7C1041BV33-15ZI CY7C1041BV33-17VC CY7C1041BV33L-17VC CY7C1041BV33-17ZC CY7C1041BV33L-17ZC CY7C1041BV33-17VI CY7C1041BV33-17ZI CY7C1041BV33-20VC CY7C1041BV33L-20VC CY7C1041BV33-20ZC CY7C1041BV33L-20ZC CY7C1041BV33-20VI CY7C1041BV33-20ZI CY7C1041BV33-25VC CY7C1041BV33L-25VC CY7C1041BV33-25ZC CY7C1041BV33L-25ZC CY7C1041BV33-25VI CY7C1041BV33-25ZI Package Name V34 V34 Z44 Z44 V34 V34 Z44 Z44 V34 Z44 V34 V34 Z44 Z44 V34 Z44 V34 V34 Z44 Z44 V34 Z44 V34 V34 Z44 Z44 V34 Z44 Package Type 44-Lead (400-Mil) Molded SOJ 44-Lead (400-Mil) Molded SOJ 44-Pin TSOP II Z44 44-Pin TSOP II Z44 44-Lead (400-Mil) Molded SOJ 44-Lead (400-Mil) Molded SOJ 44-Pin TSOP II Z44 44-Pin TSOP II Z44 44-Lead (400-Mil) Molded SOJ 44-Pin TSOP II Z44 44-Lead (400-Mil) Molded SOJ 44-Lead (400-Mil) Molded SOJ 44-Pin TSOP II Z44 44-Pin TSOP II Z44 44-Lead (400-Mil) Molded SOJ 44-Pin TSOP II Z44 44-Lead (400-Mil) Molded SOJ 44-Lead (400-Mil) Molded SOJ 44-Pin TSOP II Z44 44-Pin TSOP II Z44 44-Lead (400-Mil) Molded SOJ 44-Pin TSOP II Z44 44-Lead (400-Mil) Molded SOJ 44-Lead (400-Mil) Molded SOJ 44-Pin TSOP II Z44 44-Pin TSOP II Z44 44-Lead (400-Mil) Molded SOJ 44-Pin TSOP II Z44 Operating Range Commercial
15
Commercial
Industrial Commercial
17
Industrial Commercial
20
Industrial Commercial
25
Industrial
Document #: 38-05168 Rev. **
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CY7C1041BV33
Package Diagrams
44-Lead (400-Mil) Molded SOJ V34
51-85082-B
44-Pin TSOP II Z44
51-85087-A
Document #: 38-05168 Rev. **
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(c) Cypress Semiconductor Corporation, 2001. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress Semiconductor product. Nor does it convey or imply any license under patent or other rights. Cypress Semiconductor does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress Semiconductor products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress Semiconductor against all charges.
CY7C1041BV33
Document Title: CY7C1041BV33 256K x 16 SRAM Document Number: 38-05168 REV. ** ECN NO. 111840 Issue Date 11/17/01 Orig. of Change DSG Description of Change Change from Spec number: 38-00932 to 38-05168
Document #: 38-05168 Rev. **
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